ARF460AG Microsemi Power Products Group, ARF460AG Datasheet
ARF460AG
Manufacturer Part Number
ARF460AG
Description
FET RF N-CH 500V 14A TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.ARF460BG.pdf
(4 pages)
Specifications of ARF460AG
Transistor Type
N-Channel
Frequency
40.68MHz
Gain
15dB
Voltage - Rated
500V
Current Rating
14A
Current - Test
50mA
Voltage - Test
125V
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Noise Figure
-
Other names
ARF460AGMP
ARF460AGMP
ARF460AGMP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ARF460AG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Part Number:
ARF460AG
Manufacturer:
INTERSIL
Quantity:
1 400
Part Number:
ARF460AG
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
The ARF460A and ARF460B comprise a symmetric pair of common source RF power
transistors designed for push-pull scientifi c, commercial, medical and industrial RF power
amplifi er applications up to 65MHz. They have been optimized for both linear and high
effi ciency classes of operation.
Maximum Ratings
Static Electrical Characteristics
• Specifi ed 125 Volt, 40.68MHz Characteristics:
Symbol
Symbol
V
T
V
BV
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
I
V
J
DS(ON)
I
V
R
GS(TH)
V
DSS
GSS
g
, T
P
T
DGO
I
DSS
DSS
fs
θ
D
GS
D
L
JC
STG
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Effi ciency = 75% (Class C)
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Power Dissipation @ T
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFET
1
(I
DS
Microsemi Website - http://www.microsemi.com
D(ON)
= V
C
DS
= 25°C
C
= 7A, V
= 25V, I
GS
= 25°C
DS
, I
DS
DS
= ±30V, V
GS
D
= V
= 0.8V
= 50mA)
= 0V, I
GS
• Low Cost Common Source RF Package.
• Low Vth thermal coeffi cient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness
• RoHS Compliant
D
DSS
= 10V)
= 7A)
, V
DSS
D
DS
= 250 μA)
GS
, V
= 0V)
= 0V)
GS
= 0, T
C
All Ratings: T
= 125°C)
C
=25°C unless otherwise specifi ed
Min
500
3.3
3
ARF460AG/BG
-55 to 150
Typ
0.50
5.5
500
500
±30
250
300
14
125V, 150W, 65MHz
ARF460A/G
ARF460B/G
±100
Max
250
25
4
8
5
Common
Source
mhos
Volts
°C/W
Unit
Unit
μA
nA
°C
V
W
V
V
A
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ARF460AG Summary of contents
Page 1
... DS DSS ±30V 0V 25V 7A 50mA Microsemi Website - http://www.microsemi.com ARF460A/G ARF460B/G 125V, 150W, 65MHz Common Source =25°C unless otherwise specifi ARF460AG/BG Unit 500 V 500 14 A ±30 V 250 W 0.50 °C/W -55 to 150 °C 300 Min Typ Max Unit 500 μA 250 ±100 nA 3 ...
Page 2
... 1MHz V = 15V 0. 25°C D D[Cont 1.6Ω G Test Conditions f = 40.68MHz I = 50mA OUT 5000 1000 Figure 2, Typical Capacitance vs. Drain-to-Source Voltage → ARF460AG/BG Min Typ Max 1200 1400 150 180 DSS 20 4.0 Min Typ Max 125V 150W No Degradation in Output Power C iss C 500 ...
Page 3
... DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 6, Typical Output Characteristics RECTANGULAR PULSE DURATION (SECONDS) RC MODEL 0.0284 0.00155F Power 0.165 0.00934F (Watts) 0.307 0.128F Z (Ω 20 9 2 2.6 19 17.6 . 0.5 12 15.8 . 1 100mA dq =125V dd ARF460AG/BG 9V → 6.5V 6V 5. 1.0 (Ω) ...
Page 4
... BSC 2-Plcs. ARF460AG/ 2000 pF 100V NPO chip 125V mounted at gate lead - C2-C5 -- Arco 463 Mica trimmer C6- μF 500V ceramic chip C9 -- 2200 pF 500V chip #20 AWG .25"ID .3 "L ~80nH Output #16 AWG .312" ...