PD85025S-E STMicroelectronics, PD85025S-E Datasheet - Page 3

• Manufacturer Part Number: PD85025S-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85025S-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17.3dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 300mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 17.3dB
• Frequency (max): 1GHz
• Package Type: Power SO-10RF
• Pin Count: 2
• Input Capacitance (typ)@vds: 55@12.5VpF
• Output Capacitance (typ)@vds: 40@12.5VpF
• Reverse Capacitance (typ): 1.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 66%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8298; 497-8298-5; 497-8298; PD85025S-E

PD85025-E, PD85025S-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70 °C)
CASE
= 25 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.2
40
79
7
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
3/15