PD85025S-E STMicroelectronics, PD85025S-E Datasheet - Page 11

• Manufacturer Part Number: PD85025S-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85025S-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17.3dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 300mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 17.3dB
• Frequency (max): 1GHz
• Package Type: Power SO-10RF
• Pin Count: 2
• Input Capacitance (typ)@vds: 55@12.5VpF
• Output Capacitance (typ)@vds: 40@12.5VpF
• Reverse Capacitance (typ): 1.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 66%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8298; 497-8298-5; 497-8298; PD85025S-E

PD85025-E, PD85025S-E
Note:
Table 10.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 13. Package dimensions
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
G
D
E
a
b
F
c
PowerSO-10RF straight lead mechanical data
15.15
1.62
0.15
0.23
Min
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
mm.
1.67
5.53
0.27
15.4
Typ
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.134
0.212
0.370
0.290
0.595
0.286
0.064
0.046
0.005
0.008
0.365
0.231
Min
Package mechanical data
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch
0.05
0.01
0.37
0.24
Typ
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max
0.01
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