PD55015-E STMicroelectronics, PD55015-E Datasheet - Page 9

IC TRANS RF PWR LDMOST PWRSO-10

PD55015-E

Manufacturer Part Number
PD55015-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55015-E

Transistor Type
LDMOS
Frequency
500MHz
Gain
14dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Drain Source Voltage Vds
40V
Continuous Drain Current Id
5A
Rf Transistor Case
PowerSO-10RF
No. Of Pins
2
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Power Dissipation Pd
73W
Operating Temperature Range
-65°C To +165°C
Full Power Rating Temperature
70°C
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
40V
Output Power (max)
15W(Min)
Power Gain (typ)@vds
14dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5S
Input Capacitance (typ)@vds
89@12.5VpF
Output Capacitance (typ)@vds
60@12.5VpF
Reverse Capacitance (typ)
6.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
73000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
497-6715-5
PD55015-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55015-E
Manufacturer:
STM
Quantity:
256
Part Number:
PD55015-E
Manufacturer:
ST
0
Part Number:
PD55015-E
Manufacturer:
ST
Quantity:
20 000
PD55015-E, PD55015S-E
4.2
Figure 15. Output power vs. input power
Figure 17. Drain efficiency vs. output power
Figure 19. Output power vs. gate bias current Figure 20. Drain efficiency vs. bias current
60
50
40
30
20
10
20
18
16
14
22
12
0
18
16
14
12
10
0
0
8
6
4
2
0
0
2
0.1
PD55015S-E
200
4
480 MHz
0.2
Idq, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
6
Pin, INPUT POWER (W)
400
0.3
480 MHz
8
500 MHz
500 MHz
520 MHz
0.4
10
600
12
520 MHz
0.5
500 MHz
520 MHz
800
V
I
14
DQ
Vdd = 12.5 V
DD
Pin = .5 W
= 150 mA
Idq = 150 mA
= 12..5 V
Vdd = 12.5 V
0.6
480 MHz
Doc ID 12596 Rev 2
16
0.7
1000
18
Figure 16. Power gain vs. output power
Figure 18. Return loss vs. output power
-10
-20
-30
-40
70
60
50
40
30
0
0
0
18
16
14
12
10
0
2
2
480 MHz
200
4
4
500 MHz
500 MHz
520 MHz
Pout, OUTPUT POWER (W)
480 MHz
Idq, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
6
6
400
8
8
520 MHz
480 MHz
10
10
Typical performance
520 MHz
600
12
12
14
Idq = 150 mA
Idq = 150 mA
Vdd = 12.5 V
Vdd = 12.5 V
14
800
Vdd = 12.5 V
Pin = .5 W
500 MHz
16
16
18
1000
9/25
18

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