PD20010TR-E STMicroelectronics, PD20010TR-E Datasheet - Page 8
![TRANS N-CH 40V POWERSO-10RF FORM](/photos/28/12/281225/pd20010tr-e_sml.jpg)
PD20010TR-E
Manufacturer Part Number
PD20010TR-E
Description
TRANS N-CH 40V POWERSO-10RF FORM
Manufacturer
STMicroelectronics
Datasheet
1.PD20010STR-E.pdf
(12 pages)
Specifications of PD20010TR-E
Transistor Type
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
497-10096-2
PD20010TR-E
PD20010TR-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Note:
8/12
Table 9.
Resin protrusions not included (max value: 0.15 mm per side)
Figure 6.
Dim.
A1
A2
A3
A4
D1
E1
E2
E3
R1
R2
T1
T2
D
E
G
a
b
F
c
PowerSO-10RF straight lead mechanical data
Package dimensions
15.15
Min.
1.62
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
10 deg
6 deg
mm.
Typ.
1.67
5.53
0.27
15.4
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
Max.
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.064
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.595
0.365
0.286
0.231
Min.
10 deg
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch.
Typ.
0.05
0.01
0.37
0.24
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
Max.
0.01