PD20010TR-E STMicroelectronics, PD20010TR-E Datasheet - Page 3
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PD20010TR-E
Manufacturer Part Number
PD20010TR-E
Description
TRANS N-CH 40V POWERSO-10RF FORM
Manufacturer
STMicroelectronics
Datasheet
1.PD20010STR-E.pdf
(12 pages)
Specifications of PD20010TR-E
Transistor Type
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
497-10096-2
PD20010TR-E
PD20010TR-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
1
1.1
1.2
Electrical data
Maximum ratings
T
Table 2.
Thermal data
Table 3.
CASE
V
Symbol
Symbol
(BR)DSS
P
R
T
V
= 25 °C
DISS
T
STG
I
thJC
GS
D
J
Absolute maximum ratings
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Parameter
Parameter
C
= 70 °C)
-65 to +150
-0.5 to +15
Value
Value
165
1.6
40
59
5
°C/W
Unit
Unit
°C
°C
W
V
V
A
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