PD57002S-E STMicroelectronics, PD57002S-E Datasheet - Page 3

• Manufacturer Part Number: PD57002S-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57002S-E

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 250mA
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 2W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.25A
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Min)
• Power Gain (typ)@vds: 15(Min)dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Input Capacitance (typ)@vds: 7.1@28VpF
• Output Capacitance (typ)@vds: 5.8@28VpF
• Reverse Capacitance (typ): 0.1@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 45(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 4750mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6718-5; PD57002S-E

PD57002-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Doc ID 12332 Rev 3
Parameter
Parameter
C
= 70°C)
CASE
= 25°C)
-65 to +150
Value
Value
± 20
0.25
4.75
165
65
20
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
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