BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 8

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
BLF878_2
Product data sheet
Fig 7.
(dB)
G
(1) V
(2) V
p
22
18
14
10
400
P
source broadband test circuit as described in
2-Tone power gain and drain efficiency as a
function of frequency; typical values
L(AV)
DS
DS
= 40 V
= 42 V
= 150 W; I
7.2.1 2-Tone
500
7.2 Broadband RF figures
G
D
p
Dq
600
= 1.4 A; measured in a common
700
(2)
(1)
(1)
(2)
800
001aai081
f (MHz)
900
Rev. 02 — 15 June 2009
Section
80
60
40
20
(%)
D
8.
Fig 8.
IMD3
(dBc)
(1) V
(2) V
20
40
60
0
400
P
source broadband test circuit as described in
2-Tone third order intermodulation distortion
as a function of frequency; typical values
L(AV)
DS
DS
= 40 V
= 42 V
= 150 W; I
500
Dq
600
UHF power LDMOS transistor
= 1.4 A; measured in a common
700
(1)
(2)
© NXP B.V. 2009. All rights reserved.
800
BLF878
001aai082
f (MHz)
900
Section
8 of 18
8.