BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 3

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF878_2
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
[2]
Table 6.
T
[1]
[2]
Symbol
V
V
T
T
Symbol
R
R
Symbol Parameter
V
V
I
I
I
g
R
C
C
C
DSS
DSX
GSS
j
fs
stg
j
DS
GS
(BR)DSS
GS(th)
th(j-c)
th(c-h)
DS(on)
iss
oss
rss
= 25 C unless otherwise specified.
R
R
I
Capacitance values without internal matching.
D
th(j-c)
th(c-h)
is the drain current.
is measured under RF conditions.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
input capacitance
output capacitance
reverse transfer capacitance
is dependent on the applied thermal compound and clamping/mounting of the device.
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction to case
thermal resistance from case to heatsink
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Rev. 02 — 15 June 2009
Conditions
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
= 7.6 A
Conditions
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GSth
GSth
D
DS
+ 3.75 V;
+ 3.75 V;
DS
DS
DS
D
D
= 2.25 mA
DS
= 225 mA
= 11.2 A
= 42 V
= 40 V;
= 40 V;
= 40 V;
= 0 V
Conditions
T
P
UHF power LDMOS transistor
case
L(AV)
= 80 C;
= 150 W
[1]
[1]
[1]
[1]
[2]
[2]
[2]
Min
-
-
0.5
65
Min Typ Max
89
1.4
-
35
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
-
1.9
-
39
-
15.5 -
110 -
190 -
60
2
Max
89
+11
+150
200
BLF878
[1]
[2]
Typ
0.23
0.15
105.5 V
2.4
1.4
-
140
-
-
Unit
V
V
C
C
3 of 18
Unit
K/W
K/W
Unit
V
A
nA
S
m
pF
pF
pF
A