BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 6

• Manufacturer Part Number: BLF248,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF248,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 11.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2389; 934006630112; BLF248; BLF248

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-AB OPERATION
T
RF performance in a linear amplifier in a common source class-AB circuit.
R
Ruggedness in class-AB operation
The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions:
V
2003 Sep 02
handbook, halfpage
class-AB
h
DS
GS
VHF push-pull power MOS transistor
= 25 C; R
V
Fig.8
GS
= 28 V; f = 225 MHz at rated output power.
(pF)
= 536
C rs
600
400
200
= 0; f = 1 MHz.
MODE OF OPERATION
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
per section; optimum load impedance per section = 0.79
10
= 0.15 K/W, unless otherwise specified.
20
30
V DS (V)
MGP208
(MHz)
225
175
f
40
6
V
(V)
28
28
DS
j0.11 .
300
300
(W)
P
L
typ. 11.5
typ. 13
(dB)
G
10
p
Product specification
BLF248
typ. 65
typ. 67
(%)
55
D