BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 16

• Manufacturer Part Number: BLF248,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF248,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 11.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2389; 934006630112; BLF248; BLF248

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© Koninklijke Philips Electronics N.V. 2003
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613524/03/pp
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Date of release:
2003 Sep 02
Fax: [phone]
Document order number:
9397 750 11586
SCA75