BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 7

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
2003 Sep 19
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-B operation; V
Z
(1) T
(2) T
Fig.9
Class-B operation; V
Z
(1) T
(2) T
Fig.11 Load power as a function of input power;
L
L
(dB)
(W)
G p
P L
= 3.2 + j4.3
= 3.2 + j4.3
600
400
200
30
20
10
h
h
h
h
0
0
= 25 C.
= 70 C.
= 25 C.
= 70 C.
0
0
Power gain as a function of load power;
typical values.
typical values.
(per section); R
(per section); R
(1)
(2)
(1)
DS
DS
= 50 V; I
= 50 V; I
200
5
DQ
DQ
GS
GS
= 2
= 2
= 4
= 4
(2)
400
0.1 A; f = 108 MHz;
0.1 A; f = 108 MHz;
10
(per section).
(per section).
P L (W)
P i (W)
MGE682
MGE684
600
15
7
handbook, halfpage
Class-B operation; V
Z
(1) T
(2) T
Fig.10 Efficiency as a function of load power;
L
(%)
= 3.2 + j4.3
D
80
60
40
20
h
h
0
= 25 C.
= 70 C.
0
typical values.
(1)
(per section); R
(2)
DS
= 50 V; I
200
(2)
(1)
DQ
GS
= 2
= 4
400
0.1 A; f = 108 MHz;
(per section).
Product Specification
P L (W)
BLF278
MGE683
600