BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 4

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 19
Per transistor section
V
I
I
V
g
g
R
I
C
C
C
C
j
DSS
GSS
DSX
GS
fs
fs1
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
d-f
VHF push-pull power MOS transistor
SYMBOL
GS
/g
group indicator
GROUP
fs2
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of both sections
forward transconductance
forward transconductance ratio
of both sections
drain-source on-state resistance V
drain cut-off current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
V
V
V
V
V
V
V
GS
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
= 0; I
= 0; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; V
= 0; V
= 0; V
= 0; V
4
CONDITIONS
D
DS
DS
DS
DS
= 100 mA
D
D
D
D
D
GROUP
= 50 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
DS
= 50 mA
= 50 mA
= 5 A
= 5 A
= 5 A
DS
W
O
Q
R
U
P
S
T
V
X
Y
Z
= 10 V
= 0
125
2
4.5
0.9
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
6.2
0.2
25
480
190
14
5.4
TYP.
LIMITS
(V)
Product Specification
2.5
1
4.5
100
1.1
0.3
MAX.
BLF278
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
pF
UNIT
A