BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet - Page 5

• Manufacturer Part Number: BLF861A,112
• Description: TRANSISTOR RF LDMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF861A,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 1A
• Voltage - Test: 32V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ)
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 318000 mW
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 4S
• Drain Source Resistance (max): 160(Typ)mohm
• Input Capacitance (typ)@vds: 82@32VpF
• Output Capacitance (typ)@vds: 40@32VpF
• Reverse Capacitance (typ): 6@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 318000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2407; 934056499112; BLF861A; BLF861A

Philips Semiconductors
2001 Feb 09
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
2-tone: f
measured in an 860 MHz test circuit.
Fig.5
T
measured in an 860 MHz test circuit.
Fig.7
h
h
(dB)
= 25 C; V
= 25 C; V
(dB)
G p
G p
20
15
10
20
15
10
5
0
5
0
0
0
1
= 860 MHz ( 6 dB); f
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of load power; typical values.
DS
DS
= 32 V; I
= 32 V; I
50
100
DQ
G p
DQ
D
100
= 1 A.
= 1 A; CW, class-AB; f = 860 MHz;
2
= 860.1 MHz ( 6 dB)
G p
D
150
200
P L (PEP) (W)
200
P L (W)
MLD516
MLD514
250
300
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
5
handbook, halfpage
T
2-tone: f
measured in an 860 MHz test circuit.
Fig.6
h
(dBc)
= 25 C; V
d im
20
40
60
80
0
0
1
= 860 MHz ( 6 dB); f
Intermodulation distortion as a function of
peak envelope output power; typical values.
DS
= 32 V; I
100
DQ
= 1 A.
2
= 860.1 MHz ( 6 dB)
200
d 5
d 3
Product specification
P L (PEP) (W)
BLF861A
MLD515
300