BLF861A,112 NXP Semiconductors, BLF861A,112 Datasheet - Page 2

• Manufacturer Part Number: BLF861A,112
• Description: TRANSISTOR RF LDMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF861A,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 1A
• Voltage - Test: 32V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ)
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 318000 mW
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 14.5@32V/14(Min)@32VdB
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 4S
• Drain Source Resistance (max): 160(Typ)mohm
• Input Capacitance (typ)@vds: 82@32VpF
• Output Capacitance (typ)@vds: 40@32VpF
• Reverse Capacitance (typ): 6@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/PAL BG Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 318000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2407; 934056499112; BLF861A; BLF861A

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
Note
1. Sync compression: input sync
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Feb 09
CW, class-AB
PAL BG (TV); class-AB
V
V
I
P
T
T
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Designed to withstand abrupt load mismatch errors
Source on underside eliminates DC isolators; reducing
common mode inductance
Designed for broadband operation (UHF band)
Internal input and output matching for high gain and
optimum broadband operation.
Communication transmitter applications in the UHF
frequency range.
DS
GS
tot
UHF power LDMOS transistor
MODE OF OPERATION
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source 860 MHz test circuit.
PARAMETER
860 (ch 69)
33%; output sync 27%.
(MHz)
860
f
T
V
mb
(V)
32
32
DS
CONDITIONS
25 C
2
PINNING - SOT540A
(peak sync)
typ. 170
>150
150
(W)
PIN
P
1
2
3
4
5
L
Top view
Fig.1 Simplified outline.
65
typ. 14.5
drain 1
drain 2
gate 1
gate 2
source connected to flange
>13.5
MIN.
(dB)
>14
G
p
3
1
DESCRIPTION
65
18
318
+150
200
15
2
4
MAX.
>50
>40
Product specification
(%)
MBK777
D
5
BLF861A
V
V
A
W
C
C
note 1
UNIT
(dB)
G
1
p