BLF871S,112 NXP Semiconductors, BLF871S,112 Datasheet - Page 10
BLF871S,112
Manufacturer Part Number
BLF871S,112
Description
TRANSISTOR RF PWR LDMOS SOT467B
Manufacturer
NXP Semiconductors
Datasheet
1.BLF871112.pdf
(19 pages)
Specifications of BLF871S,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
21dB
Voltage - Rated
89V
Current Rating
20A
Current - Test
500mA
Voltage - Test
40V
Power - Output
100W
Package / Case
SOT467B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5105-5
934063502112
BLF871S,112
934063502112
BLF871S,112
NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
7.5 Reliability
Table 8.
Simulated Z
f
(MHz)
925
950
975
1000
Fig 13. Electromigration (I
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
1
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
Typical impedance
i
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
0
and Z
(7) (8) (9) (10) (11)
L
device impedance; impedance info at V
Rev. 04 — 19 November 2009
DS(DC)
…continued
Z
(Ω)
1.004 + j0.459
1.005 + j0.540
1.007 + j0.619
1.009 + j0.696
i
)
2
(1) (2) (3) (4) (5) (6)
BLF871; BLF871S
DS
4
= 42 V.
UHF power LDMOS transistor
Z
(Ω)
2.456 + j2.455
2.378 + j2.388
2.303 + j2.320
2.230 + j2.250
L
I
DS(DC)
(A)
© NXP B.V. 2010. All rights reserved.
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