BLF6G22LS-130,112 NXP Semiconductors, BLF6G22LS-130,112 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22LS-130,112
• Description: TRANSISTOR BASE STATION SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-130,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4280; 934060923112; BLF6G22LS-130

NXP Semiconductors
BLF6G22LS-130_1
Product data sheet
Fig 5.
(dB)
G
p
21
19
17
15
13
0
V
f
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
2
DS
= 2167.5 MHz; carrier spacing 10 MHz.
= 28 V; I
10
7.4 2-carrier W-CDMA
Dq
= 1100 mA; f
20
30
1
= 2157.5 MHz;
40
G
001aai098
P
D
p
L
(W)
50
Rev. 01 — 23 May 2008
40
30
20
10
0
(%)
D
Fig 6.
ACPR,
IMD3
(dBc)
20
40
60
80
0
0
V
f
2-carrier W-CDMA adjacent channel leakage
ratio and IMD3 as functions of average load
power; typical values
2
DS
= 2170.05 MHz.
= 28 V; I
10
Dq
BLF6G22LS-130
= 1100 mA; f
ACPR
IMD3
20
Power LDMOS transistor
1
= 2169.95 MHz;
30
© NXP B.V. 2008. All rights reserved.
P
L(AV)
001aai102
(W)
40
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