BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet - Page 6
![TRANSISTOR RF LDMOS SOT467C](/photos/5/63/56375/blf1046_sml.jpg)
BLF1046,112
Manufacturer Part Number
BLF1046,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF1046112.pdf
(12 pages)
Specifications of BLF1046,112
Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
960MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
300mA
Voltage - Test
26V
Power - Output
45W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
45W
Power Gain (typ)@vds
14(Min)@26VdB
Frequency (max)
1GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
2S
Drain Source Resistance (max)
300(Typ)@14Vmohm
Input Capacitance (typ)@vds
46@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46(Min)%
Mounting
Screw
Mode Of Operation
1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2384
934055384112
BLF1046
BLF1046
934055384112
BLF1046
BLF1046
Philips Semiconductors
2000 Dec 20
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
Fig.10 EDGE 8PSK adjacent channel power as a
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.12 Intermodulation distortion as a function of
ACPR
(dBc)
DS
DS
(dBc)
d im
= 26 V; I
= 28 V; I
20
40
60
80
20
40
60
80
0
0
850
0
function of load power; typical values.
frequency; typical values.
DQ
DQ
= 300 mA; T
= 300 mA; P
4
900
d 3
d 5
d 7
h
8
L
200 KHz
250 KHz
400 KHz
= 45 W (PEP); T
25 C; f = 960 MHz;
12
950
h
f (MHz)
16
25 C;
P L (W)
MLD463
MLD465
1000
20
6
handbook, halfpage
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.11 Power gain and drain efficiency as functions
DS
(dB)
G p
= 28 V; I
20
15
10
5
0
850
of frequency; typical values.
DQ
= 300 mA; P
G p
D
900
L
= 45 W (PEP); T
950
Product specification
h
f (MHz)
25 C;
BLF1046
MLD464
1000
80
60
40
20
0
(%)
D