BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet - Page 6

• Manufacturer Part Number: BLF1046,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1046,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 300mA
• Voltage - Test: 26V
• Power - Output: 45W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 45W
• Power Gain (typ)@vds: 14(Min)@26VdB
• Frequency (max): 1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 300(Typ)@14Vmohm
• Input Capacitance (typ)@vds: 46@26VpF
• Output Capacitance (typ)@vds: 37@26VpF
• Reverse Capacitance (typ): 1.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46(Min)%
• Mounting: Screw
• Mode Of Operation: 1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2384; 934055384112; BLF1046; BLF1046

Philips Semiconductors
2000 Dec 20
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
Fig.10 EDGE 8PSK adjacent channel power as a
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.12 Intermodulation distortion as a function of
ACPR
(dBc)
DS
DS
(dBc)
d im
= 26 V; I
= 28 V; I
20
40
60
80
20
40
60
80
0
0
850
0
function of load power; typical values.
frequency; typical values.
DQ
DQ
= 300 mA; T
= 300 mA; P
4
900
d 3
d 5
d 7
h
8
L
200 KHz
250 KHz
400 KHz
= 45 W (PEP); T
25 C; f = 960 MHz;
12
950
h
f (MHz)
16
25 C;
P L (W)
MLD463
MLD465
1000
20
6
handbook, halfpage
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.11 Power gain and drain efficiency as functions
DS
(dB)
G p
= 28 V; I
20
15
10
5
0
850
of frequency; typical values.
DQ
= 300 mA; P
G p
D
900
L
= 45 W (PEP); T
950
Product specification
h
f (MHz)
25 C;
BLF1046
MLD464
1000
80
60
40
20
0
(%)
D