BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet - Page 2
![TRANSISTOR RF LDMOS SOT467C](/photos/5/63/56375/blf1046_sml.jpg)
BLF1046,112
Manufacturer Part Number
BLF1046,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF1046112.pdf
(12 pages)
Specifications of BLF1046,112
Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
960MHz
Gain
14dB
Voltage - Rated
65V
Current Rating
4.5A
Current - Test
300mA
Voltage - Test
26V
Power - Output
45W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
45W
Power Gain (typ)@vds
14(Min)@26VdB
Frequency (max)
1GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
2S
Drain Source Resistance (max)
300(Typ)@14Vmohm
Input Capacitance (typ)@vds
46@26VpF
Output Capacitance (typ)@vds
37@26VpF
Reverse Capacitance (typ)
1.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46(Min)%
Mounting
Screw
Mode Of Operation
1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2384
934055384112
BLF1046
BLF1046
934055384112
BLF1046
BLF1046
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 Dec 20
CW, class-AB (2-tone)
CW, class-AB (1-tone)
V
V
I
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
Communication transmitter applications in the UHF
frequency range.
DS
GS
UHF power LDMOS transistor
MODE OF OPERATION
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
h
= 25 C in the common source broadband test circuit.
f
1
= 960; f
(MHz)
PARAMETER
960
f
2
= 960.1
CAUTION
V
(V)
2
26
26
DS
PINNING - SOT467C
PIN
45 (PEP)
1
2
3
(W)
P
45
L
Fig.1 Simplified outline.
drain
gate
source, connected to flange
Top view
65
MIN.
(dB)
>14
>14
G
1
2
p
DESCRIPTION
65
4.5
+150
200
20
MBK584
Product specification
3
MAX.
>35
>46
(%)
D
BLF1046
V
V
A
C
C
(dBc)
UNIT
d
im
26