BLF1046,112 NXP Semiconductors, BLF1046,112 Datasheet - Page 2

• Manufacturer Part Number: BLF1046,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1046,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 4.5A
• Current - Test: 300mA
• Voltage - Test: 26V
• Power - Output: 45W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 45W
• Power Gain (typ)@vds: 14(Min)@26VdB
• Frequency (max): 1GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 2S
• Drain Source Resistance (max): 300(Typ)@14Vmohm
• Input Capacitance (typ)@vds: 46@26VpF
• Output Capacitance (typ)@vds: 37@26VpF
• Reverse Capacitance (typ): 1.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46(Min)%
• Mounting: Screw
• Mode Of Operation: 1-Tone Class-AB/2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2384; 934055384112; BLF1046; BLF1046

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 Dec 20
CW, class-AB (2-tone)
CW, class-AB (1-tone)
V
V
I
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
Communication transmitter applications in the UHF
frequency range.
DS
GS
UHF power LDMOS transistor
MODE OF OPERATION
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
h
= 25 C in the common source broadband test circuit.
f
1
= 960; f
(MHz)
PARAMETER
960
f
2
= 960.1
CAUTION
V
(V)
2
26
26
DS
PINNING - SOT467C
PIN
45 (PEP)
1
2
3
(W)
P
45
L
Fig.1 Simplified outline.
drain
gate
source, connected to flange
Top view
65
MIN.
(dB)
>14
>14
G
1
2
p
DESCRIPTION
65
4.5
+150
200
20
MBK584
Product specification
3
MAX.
>35
>46
(%)
D
BLF1046
V
V
A
C
C
(dBc)
UNIT
d
im
26