BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 8
![TRANSISTOR RF DMOS SOT409A](/photos/5/63/56366/sot-409a_sot409a_pkg_sml.jpg)
BLF202,115
Manufacturer Part Number
BLF202,115
Description
TRANSISTOR RF DMOS SOT409A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202,115
Package / Case
SOT-409A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
1A
Current - Test
20mA
Voltage - Test
12.5V
Power - Output
2W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2410-2
934055627115
BLF202 T/R
BLF202 T/R
934055627115
BLF202 T/R
BLF202 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF202,115
Manufacturer:
Wantcom
Quantity:
1 400
Philips Semiconductors
List of components (see Fig.10)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (
2003 Sep 19
C1, C11
C2, C9
C3, C5
C4, C6
C7
C8
C10
L1
L2, L3
L4
L5
L6
R1
R2
R3
R4
R5
R6
HF/VHF power MOS transistor
COMPONENT
1.6 mm.
film dielectric trimmer
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor
Sprague electrolytic tantalum
capacitor
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
8 turns enamelled 0.8 mm copper
wire
stripline; note 2
3 turns enamelled 1 mm copper wire 57 nH
9 turns enamelled 1 mm copper wire 355 nH
grade 3B Ferroxcube RF choke
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
10 turns cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
DESCRIPTION
8
2 to 9 pF
2 to 9 pF
1 nF; 500 V
2
in parallel,
50 V
2.2 F; 35 V
5.1 pF; 500 V
9.1 pF; 500 V
137 nH
81
237
1 k
1 M
5 k
7.5 k
10
VALUE
100 nF
length 5.1 mm;
int. dia. 4 mm;
leads 2
8 mm
length 5 mm;
int. dia. 6 mm;
leads 2
length 11 mm;
int. dia. 7 mm;
leads 2
DIMENSIONS
2 mm
5 mm
5 mm
5 mm
2222 809 09005
2222 809 09002
2222 852 47104
4312 020 36642
2322 151 72371
2322 151 71002
2322 151 71005
2322 151 77502
2322 153 51009
Product specification
CATALOGUE NO.
r
= 2.2), thickness
BLF202