BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 3
![TRANSISTOR RF DMOS SOT409A](/photos/5/63/56366/sot-409a_sot409a_pkg_sml.jpg)
BLF202,115
Manufacturer Part Number
BLF202,115
Description
TRANSISTOR RF DMOS SOT409A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202,115
Package / Case
SOT-409A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
1A
Current - Test
20mA
Voltage - Test
12.5V
Power - Output
2W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2410-2
934055627115
BLF202 T/R
BLF202 T/R
934055627115
BLF202 T/R
BLF202 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF202,115
Manufacturer:
Wantcom
Quantity:
1 400
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 19
V
V
I
P
T
T
R
handbook, halfpage
D
stg
j
DS
GS
tot
SYMBOL
SYMBOL
th j-mb
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
10
(A)
I D
10
mb
1
1
2
1
= 85 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
mounting base
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
V DS (V)
DSon
.
MCD789
10
2
T
T
3
mb
mb
85 C
85 C; P
CONDITIONS
CONDITIONS
tot
= 5.7 W
MIN.
65
VALUE
20.5
Product specification
40
1
5.7
150
200
MAX.
20
BLF202
UNIT
K/W
V
V
A
W
UNIT
C
C