BF992,215 NXP Semiconductors, BF992,215 Datasheet - Page 4

• Manufacturer Part Number: BF992,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF992,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 20V
• Current Rating: 40mA
• Noise Figure: 1.2dB
• Current - Test: 15mA
• Voltage - Test: 10V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.04 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Noise Figure (max): 1.2(Typ)dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 4@10V@Gate 1/1.7@10V@Gate 2pF
• Output Capacitance (typ)@vds: 2@10VpF
• Reverse Capacitance (typ): 0.03@10VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1971-2; 933615000215; BF992 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate, 8 mm
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
Common source; T
R
C
C
C
C
F
j
SYMBOL
SYMBOL
SYMBOL
y
V
V
V
V
I
I
th j-a
= 25 C unless otherwise specified.
ig1-s
ig2-s
os
rs
Silicon N-channel dual gate MOS-FET
G1-SS
G2-SS
fs
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
thermal resistance from junction to ambient in free air
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
amb
= 25 C; V
PARAMETER
PARAMETER
DS
PARAMETER
= 10 V; V
G2-S
Rev. 04 - 21 November 2007
= 4 V; I
10 mm
V
V
V
V
V
V
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
D
= V
= V
= 4 V; V
= 0; V
= V
= V
= 15 mA; unless otherwise specified.
CONDITIONS
0.7 mm.
DS
DS
DS
DS
CONDITIONS
DS
= 0; I
= 0; I
= 0; V
= 0; V
DS
= 10 V; I
S
= 2 mS
= 10 V; I
G1-SS
G2-SS
G1-S
G2-S
note 1
CONDITIONS
= 7 V
= 7 V
= 10 mA
= 10 mA
D
= 20 A
D
= 20 A
20
MIN.
8
8
0.2
0.2
25
4
1.7
2
30
1.2
MIN.
TYP.
VALUE
460
Product specification
20
20
1.3
1.1
25
25
40
MAX.
MAX.
BF992
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UNIT
K/W
V
V
V
V
nA
nA
mS
pF
pF
pF
fF
dB
UNIT
UNIT