BF992,215 NXP Semiconductors, BF992,215 Datasheet - Page 3

MOSFET NCH DUAL GATE 20V SOT143B

BF992,215

Manufacturer Part Number
BF992,215
Description
MOSFET NCH DUAL GATE 20V SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF992,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
20V
Current Rating
40mA
Noise Figure
1.2dB
Current - Test
15mA
Voltage - Test
10V
Configuration
Single Dual Gate
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Application
VHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
20V
Noise Figure (max)
1.2(Typ)dB
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
4@10V@Gate 1/1.7@10V@Gate 2pF
Output Capacitance (typ)@vds
2@10VpF
Reverse Capacitance (typ)
0.03@10VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1971-2
933615000215
BF992 T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate, 8 mm
handbook, halfpage
V
I
I
I
P
T
T
D
G1
G2
SYMBOL
P tot max
stg
j
DS
tot
Silicon N-channel dual gate MOS-FET
(mW)
200
100
0
0
Fig.2 Power derating curves.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
PARAMETER
100
T amb ( C)
o
MBL033
200
Rev. 04 - 21 November 2007
T
amb
10 mm
60 C; see Fig.2; note 1
CONDITIONS
0.7 mm.
65
MIN.
Product specification
20
40
200
+150
150
10
10
MAX.
BF992
3 of 9
V
mA
mA
mA
mW
C
C
UNIT

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