BAR 65-03W E6327 Infineon Technologies, BAR 65-03W E6327 Datasheet - Page 7

• Manufacturer Part Number: BAR 65-03W E6327
• Description: DIODE RF SGL 30V 100MA SOD-323
• Manufacturer: Infineon Technologies

Specifications of BAR 65-03W E6327

• Package / Case: SOD-323
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
• Resistance @ If, F: 900 mOhm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Frequency Range: VHF
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6503WE6327XT; SP000010186

Permissible Puls Load R
BAR65-03W
Insertion loss I
I
BAR65-02L in series configuration, Z = 50
F
= Parameter
-0.15
-0.25
-0.35
mA
10
10
10
10
dB
-0.1
-0.2
-0.3
-0.4
0
3
2
1
0
10
0
-7
10
0.5
-6
L
10
= -|S
-5
1
10
21
-4
1.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
|
2
10
thJS
= (f)
-3
10 mA
5 mA
1 mA
0.1 mA
2
= (t
10
-2
GHz
p
)
t
f
°C
p
10
3
0
7
Permissible Pulse Load
I
BAR65-03W
Isolation I
V
BAR65-02L in series configuration Z = 50
Fmax
R
= Parameter
mA
10
10
dB
-10
-15
-20
-25
-30
/ I
0
1
0
10
0
FDC
-6
SO
10
= (t
0.5
-5
= -|S
10
p
)
-4
1
21
|
10
2
=
-3
1.5
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
(f)
-2
0 V
1 V
10 V
2
10
2007-04-19
BAR65...
-1
GHz
t
f
°C
p
10
3
1