BAR 65-03W E6327 Infineon Technologies, BAR 65-03W E6327 Datasheet - Page 3

• Manufacturer Part Number: BAR 65-03W E6327
• Description: DIODE RF SGL 30V 100MA SOD-323
• Manufacturer: Infineon Technologies

Specifications of BAR 65-03W E6327

• Package / Case: SOD-323
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
• Resistance @ If, F: 900 mOhm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Frequency Range: VHF
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR6503WE6327XT; SP000010186

1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
BAR65-02L in series configuration, Z = 50
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
R
L
= 1 mA, f = 100 MHz
= 5 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 1 mA, f = 1.8 GHz
= 5 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
= 0 V, f = 100 MHz ... 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA,
3
Symbol
C
R
r
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.45
0.65
0.56
0.08
0.06
0.05
700
typ.
3.5
0.4
0.5
10
80
12
5
1
7
5
max.
0.95
2007-04-19
0.9
0.8
0.9
BAR65...
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k
ns
µm
dB