BFR92AT/R NXP Semiconductors, BFR92AT/R Datasheet - Page 5

• Manufacturer Part Number: BFR92AT/R
• Description: Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR92AT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 40@15mA@10V
• Maximum Operating Frequency: 5000(Typ) MHz
• Maximum Dc Collector Current: 0.025 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2 V

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
I
Fig.5
V
MSG = maximum stable gain;
G
Fig.7
C
CE
UM
(pF)
= i
gain
(dB)
C c
0.8
0.6
0.4
0.2
= 10 V; f = 500 MHz.
30
20
10
c
= maximum unilateral power gain.
0
1
0
= 0; f = 1 MHz; T
0
0
Collector capacitance as a function of
collector-base voltage; typical values.
Gain as a function of collector current;
typical values.
5
5
j
= 25 C.
10
10
15
15
G UM
MSG
20
V CB (V)
I C (mA)
MBB274
MBB278
20
25
Rev. 04 - 2 March 2009
handbook, halfpage
handbook, halfpage
V
Fig.6
V
MSG = maximum stable gain;
G
Fig.8
(GHz)
CE
CE
UM
f T
gain
(dB)
= 10 V; f = 500 MHz; T
= 10 V; f = 1 GHz.
30
20
10
= maximum unilateral power gain.
0
6
4
2
0
0
0
Transition frequency as a function of
collector current; typical values.
Gain as a function of collector current;
typical values.
5
10
amb
10
= 25 C.
15
20
G UM
MSG
Product specification
I
C
20
I
(mA)
C
BFR92A
MBB275
MBB279
(mA)
5 of 12
30
25