BC869T/R NXP Semiconductors, BC869T/R Datasheet - Page 8

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BC869T/R

Manufacturer Part Number
BC869T/R
Description
Trans GP BJT PNP 20V 1A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BC869T/R

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
50@5mA@10V|85@500mA@1V|60@1A@1V
Maximum Operating Frequency
140(Typ) MHz
Maximum Dc Collector Current
1 A
Maximum Collector Emitter Saturation Voltage
0.5@100mA@1A V
Maximum Collector Base Voltage
32 V
Maximum Collector Emitter Voltage
20 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
2004 Nov 08
handbook, halfpage
handbook, halfpage
PNP medium power transistor;
20 V, 1 A
BC869-25.
(1) I
(2) I
(3) I
(4) I
Fig.9
BC869-25.
V
Fig.11 DC current gain as a function of collector
h FE
(A)
I C
CE
10
10
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
−10
3
2
= −1 V.
B
B
B
B
0
= −12 mA.
= −10.8 mA.
= −9.6 mA.
= −8.4 mA.
−4
0
Collector current as a function of
collector-emitter voltage; typical values.
current; typical values.
−10
−1
−3
(5) I
(6) I
(7) I
(8) I
−10
−2
−2
B
B
B
B
= −7.2 mA.
= −6.0 mA.
= −4.8 mA.
= −3.6 mA.
−10
−3
−1
−1
−4
(9) I
(10) I
I C (mA)
(10)
V CE (V)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
(2)
(3)
MLE315
B
B
MLE313
= −2.4 mA.
= −1.2 mA.
−10
−5
8
handbook, halfpage
handbook, halfpage
BC869-25.
V
Fig.10 Base-emitter voltage as function of collector
BC869-25.
I
Fig.12 Collector-emitter saturation voltage as a
C
V CEsat
CE
−10
/I
V BE
(V)
B
(V)
−10
−10
−10
= −1 V.
= 10.
−1
−1
−10
−1
−1
−2
−3
−10
−4
current; typical values.
function of collector current; typical values.
−4
−10
−10
−3
−3
−10
−10
−2
−2
−10
−10
−1
−1
Product data sheet
−1
−1
I C (A)
MLE318
I C (A)
BC869
MLE316
−10
−10

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