BC850CT/R NXP Semiconductors, BC850CT/R Datasheet - Page 3

• Manufacturer Part Number: BC850CT/R
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BC850CT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 420@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA|0.6@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
BC849
BC850
BC849
BC850
PARAMETER
PARAMETER
3
open emitter
open base
open collector
T
note 1
amb
CONDITIONS
CONDITIONS
≤ 25 °C; note 1
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
500
BC849; BC850
30
50
30
45
5
100
200
200
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT