BC850CT/R NXP Semiconductors, BC850CT/R Datasheet - Page 2

• Manufacturer Part Number: BC850CT/R
• Description: Trans GP BJT NPN 45V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BC850CT/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 420@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA|0.6@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BC849B
BC849C
BC849B
BC849C
BC850B
BC850C
NUMBER
NPN general purpose transistors
NUMBER
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE
MARKING
CODE
2B*
2C*
NAME
(1)
−
BC850B
BC850C
NUMBER
TYPE
plastic surface mounted package; 3 leads
MARKING
CODE
2G*
2F*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
Fig.1 Simplified outline (SOT23) and symbol.
PIN
Top view
1
2
3
1
base
emitter
collector
3
DESCRIPTION
2
BC849; BC850
MAM255
Product data sheet
1
VERSION
SOT23
3
2