BAP65-05,215 NXP Semiconductors, BAP65-05,215 Datasheet - Page 4

• Manufacturer Part Number: BAP65-05,215
• Description: DIODE PIN 30V 100MA SOT-23
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.17 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056664215; BAP65-05 T/R; BAP65-05 T/R

Philips Semiconductors
GRAPHICAL DATA
2001 Nov 01
Silicon PIN diode
f = 100 MHz; T
Fig.2
|s
(1) I
(2) I
(3) I
Diode inserted in series with a 50
via the analyzer Tee network. T
Fig.4
(dB)
21
( )
r
|
D
-0.1
-0.2
-0.3
-0.4
-0.5
0.1
2
10
F
F
F
1
0
= 0.5 mA.
= 1 mA.
= 5 mA.
0.1
0
Forward resistance as a function of forward
current; typical values.
Insertion loss ( s
function of frequency; typical values.
j
= 25 C.
(1)
(4) I
(5) I
1
1
(4)
(2)
F
F
= 10 mA.
= 100 mA.
amb
21
2
stripline circuit and biased
= 25 C.
(5)
(3)
) of the diode as a
10
2
f (GHz)
I
F
(mA)
100
3
4
|s
(dB)
21
(pF)
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50
T
Fig.5
|
C
2
amb
d
-10
-20
-30
-40
= 25 C.
700
600
500
400
300
200
100
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation ( s
frequency; typical values.
0
j
= 25 C.
4
1
21
2
) of the diode as a function of
8
12
Preliminary specification
2
f (GHz)
BAP65-01
16
V
stripline circuit.
R
(V)
3
20