BAP65-05,215 NXP Semiconductors, BAP65-05,215 Datasheet - Page 3

• Manufacturer Part Number: BAP65-05,215
• Description: DIODE PIN 30V 100MA SOT-23
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-05,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.17 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056664215; BAP65-05 T/R; BAP65-05 T/R

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Nov 01
V
I
C
r
L
R
j
s
s
s
s
s
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
d
21
21
21
21
21
th j-s
Silicon PIN diode
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
R
= 50 mA
= 1 mA; f = 100 MHz
= 5 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 5 mA; f = 900 MHz
= 5 mA; f = 1800 MHz
= 5 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 20 V
= 0 V; f = 1 MHz
= 1 V; f = 1 MHz
= 3 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
3
CONDITIONS
L
R
= 100
= 3 mA
F
;
= 10 mA to
0.9
0.61
0.48
0.43
0.375
1.0
0.6
0.5
0.3
9.4
5.5
4.1
0.10
0.12
0.15
0.08
0.10
0.12
0.06
0.09
0.11
0.05
0.08
0.10
0.17
0.6
TYP.
VALUE
190
Preliminary specification
1.1
20
0.9
0.8
0.95
0.9
MAX.
BAP65-01
UNIT
K/W
V
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
UNIT