BAP55LX,315 NXP Semiconductors, BAP55LX,315 Datasheet - Page 2

• Manufacturer Part Number: BAP55LX,315
• Description: DIODE SILICON PIN SOD-882T
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP55LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
• Resistance @ If, F: 800 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 135mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.28 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.8 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 4.5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 135 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061239315; BAP55LX T/R; BAP55LX T/R

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP55LX
Product data sheet
Symbol
V
I
C
r
R
D
amb
F
d
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP55LX
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
V
V
see
see
F
R
R
All information provided in this document is subject to legal disclaimers.
= 50 mA
V
V
V
I
I
I
I
F
F
F
F
= 20 V
= 50 V
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 20 V
Rev. 3 — 13 January 2011
2; f = 1 MHz;
3; f = 100 MHz;
Conditions
T
sp
= 90 °C
Conditions
Marking code
LC
Min
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
−65
−65
Typ
0.95
-
-
0.28
0.23
0.18
3.3
2.2
0.8
0.5
BAP55LX
Max
50
100
135
+150
+150
Typ
78
Silicon PIN diode
© NXP B.V. 2011. All rights reserved.
Max
1.1
10
100
-
-
0.28
4.5
3.3
1.2
0.8
Unit
V
mA
mW
°C
°C
Unit
K/W
Unit
V
nA
nA
pF
pF
pF
Ω
Ω
Ω
Ω
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