NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet - Page 3

• Manufacturer Part Number: NTMD4184PFR2G
• Description: MOSFET P-CH 30V 2.3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4184PFR2G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 770mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Update Notification #16265
AFFECTED DEVICE LIST
NTMS4107NR2G
NTMS4176PR2G
NTMS4177PR2G
NTMS4873NFR2G
NTMSD2P102LR2G
NTMSD2P102R2SG
NTMSD2P102R2
NTMSD3P102R2G
NTMSD3P102R2SG
NTMSD3P102R2
NTMD4184PFR2G
NTMD4884NFR2G
Issue Date: 12 May 2009
Rev.07-02-06
Page 3 of 3