NTMD4184PFR2G ON Semiconductor, NTMD4184PFR2G Datasheet

NTMD4184PFR2G

Manufacturer Part Number

NTMD4184PFR2G

Description

MOSFET P-CH 30V 2.3A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.NTMD4184PFR2G.pdf (7 pages)

Specifications of NTMD4184PFR2G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

95 mOhm @ 3A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.3A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

4.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

360pF @ 10V

Power - Max

770mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.095 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4 A

Power Dissipation

2.31 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMD4184PFR2G

Manufacturer:

ON Semiconductor

Quantity:

1 600

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMD4184PFR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
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NTMD4184PF

Power MOSFET and

Schottky Diode

-30 V, -4.0 A, Single P-Channel with 20 V,

2.2 A, Schottky Barrier Diode

Features

•

Applications

•

March, 2008 - Rev. 0

MOSFET MAXIMUM RATINGS

SCHOTTKY MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

Average Rectified Forward

Current, (Note 1)

Design Flexibility

Conduction Losses

FETKYt Surface Mount Package Saves Board Space

Independent Pin-Out for MOSFET and Schottky Allowing for

Low R

Optimized Gate Charge to Minimize Switching Losses

This is a Pb-Free Device

Disk Drives

DC-DC Converters

Printers

qJA

(Note 1)

(Note 2)

t < 10 s (Note 1)

DS(on)

qJA

(Note 1)

(Note 2)

t < 10 s

MOSFET and Low V

Rating

Steady

State

= 10 ms

= 25°C,

t < 10 s

Steady

State

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C unless otherwise stated)

Schottky to Minimize

= 25°C unless otherwise stated)

Symbol

, T

RRM

DSS

STG

-55 to

Value

+150

-3.3

-2.6

-2.3

-1.8

0.77

-4.0

-3.2

2.31

-1.3

-30

±20

-10

260

1.6

2.2

3.2

Unit

°C

†For information on tape and reel specifications,

NTMD4184PFR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

P-Channel MOSFET

(BR)DSS

-30 V

20 V

Device

Max

ORDERING INFORMATION

4184PF = Device Code

P-CHANNEL MOSFET

SCHOTTKY DIODE

http://onsemi.com

165 mW @ -4.5 V

CASE 751

95 mW @ -10 V

STYLE 18

SOIC-8

= Assembly Location

= Year

= Work Week

= Pb-Free Package

DS(on)

(Pb-Free)

Package

SOIC-8

0.58 V

Publication Order Number:

Max

MARKING DIAGRAM

& PIN ASSIGNMENT

Max

Schottky Diode

2500/Tape & Reel

C C D D

A A S G

NTMD4184PF/D

4184PF

AYWW

Shipping

-4.0 A

2.2 A

Max

†

Related parts for NTMD4184PFR2G

NTMD4184PFR2G Summary of contents

Page 1

... Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device Package Shipping NTMD4184PFR2G SOIC-8 2500/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t ≤10 s Steady State (Note 1) Junction-to-FOOT (Drain) Equivalent to R Junction-to-Ambient – Steady State (Note 2) 1. Surface-mounted on FR4 board using ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 10 5.0 V ...

Page 4

1.4 GS 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature 400 350 ...

Page 5

Single Pulse 0.01 0.0000001 0.000001 0.00001 0.0001 Figure 11. Thermal Response - R 100 0.5 0.2 0.1 10 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.001 0.0000001 0.000001 ...

Page 6

T = 125° 85°C J 100E-6 10E 25°C J 1E-6 100E REVERSE VOLTAGE (V) R Figure 15. Typical Reverse Current 1000 100 10 0 NTMD4184PF TYPICAL CHARACTERISTICS 100E-3 ...

Page 7

... *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY and Micro8 are registered trademarks of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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