NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 8

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
1.0
0.1
1.0E−05
D = 0.5
0.05
0.02
0.01
0.2
0.1
V
V
+
−
+
−
in
in
1.0E−04
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
SINGLE PULSE
1.0E−03
STEP DOWN SWITCHING REGULATORS
Figure 22. Schottky Thermal Response
Synchronous Buck Regulator
TYPICAL APPLICATIONS
Buck Regulator
1.0E−02
http://onsemi.com
CHIP
JUNCTION
8
t, TIME (s)
1.0E−01
L
O
L
NORMALIZED TO R
O
39.422 mF
0.1010 W
1.0E+00
C
C
O
O
493.26 mF
1.2674 W
qJA
AT STEADY STATE (1″ PAD)
V
V
+
out
−
+
out
−
0.0131 F
27.987 W
1.0E+01
LOAD
LOAD
30.936 W
0.2292 F
1.0E+02
36.930 W
2.267 F
AMBIENT
1.0E+03