NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 2

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State.
6. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
SCHOTTKY RECTIFIER MAXIMUM RATINGS
THERMAL CHARACTERISTICS − SCHOTTKY AND MOSFET
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current (Note 3)
Peak Repetitive Forward Current (Note 3)
Non−Repetitive Peak Surge Current
Thermal Resistance − Junction−to−Ambient (Note 4) − MOSFET
Thermal Resistance − Junction−to−Ambient (Note 5) − MOSFET
Thermal Resistance − Junction−to−Ambient (Note 3) − MOSFET
Thermal Resistance − Junction−to−Ambient (Note 4) − Schottky
Thermal Resistance − Junction−to−Ambient (Note 5) − Schottky
Thermal Resistance − Junction−to−Ambient (Note 3) − Schottky
Operating and Storage Temperature Range
Maximum Instantaneous Forward Voltage (Note 6)
Maximum Instantaneous Reverse Current (Note 6)
Maximum Voltage Rate of Change
(Rated V
(Rated V
(Surge applied at rated load conditions, half−wave, single phase, 60 Hz)
R
R
) T
, Square Wave, 20 kHz) T
A
= 104°C
Characteristics
A
= 108°C
Rating
(T
J
= 25°C unless otherwise noted)
http://onsemi.com
I
F
= 100 mAdc
I
I
2
F
F
V
V
= 3.0 Adc
= 6.0 Adc
(T
R
R
C
= 30 V
= 30 V
= 25°C unless otherwise noted)
Symbol
dV/dt
V
I
R
F
T
T
Symbol
T
J
J
V
R
R
R
R
R
R
J
0.28
0.42
0.50
I
I
= 25°C
= 25°C
250
V
RRM
, T
fsm
I
frm
qJA
qJA
qJA
qJA
qJA
qJA
O
−
R
stg
10,000
Value
−55 to +150
T
T
J
J
Value
= 125°C
= 125°C
62.5
62.5
167
197
0.13
0.33
0.45
2.0
4.0
30
30
97
97
25
−
Amps
Amps
Amps
°C/W
Volts
Volts
Unit
Unit
V/ms
mA
mA