NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 6

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
0.1
10
0.001
0.1
0.01
1.0
0.1
T
J
0.00001
= 125°C
V
Figure 15. Typical Forward Voltage
F
D = 0.5
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2
0.05
0.02
0.01
0.2
0.1
85°C
0.0001
0.3
SINGLE PULSE
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.4
TYPICAL FET ELECTRICAL CHARACTERISTICS
Figure 14. Diode Reverse Recovery Waveform
0.001
−40 °C
I
S
0.5
Figure 13. FET Thermal Response
25°C
t
p
0.6
0.01
http://onsemi.com
di/dt
t
a
0.7
6
CHIP
JUNCTION
t, TIME (s)
t
rr
t
b
I
0.1
S
1.0
0.1
10
0.25 I
0
0.0106 W
S
0.0253 F
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1
Figure 16. Maximum Forward Voltage
T
J
1.0
= 125°C
0.0431 W
0.1406 F
0.2
TIME
85°C
0.1643 W
0.3
0.5064 F
10
0.4
25°C
0.3507 W
2.9468 F
0.5
0.4302 W
100
177.14 F
0.6
AMBIENT
0.7
1000
0.8