NTD80N02 ON Semiconductor, NTD80N02 Datasheet - Page 5

• Manufacturer Part Number: NTD80N02
• Description: MOSFET N-CH 24V 80A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD80N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 20V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Case: TO-252
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
NTD80N02T4G
NTD80N02−1G
cifications Brochure, BRD8011/D.
100
10
1000
0.01
1
100
0.1
10
0.1
1
1E-05
Figure 11. Maximum Rated Forward Biased
Order Number
V
0.02
SINGLE PULSE
V
SINGLE PULSE
T
0.05
0.01
DS
DUTY CYCLE
0.2
0.1
C
GS
= 25°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
D = 0.5
= 10 V
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1E-04
Safe Operating Area
1
LIMIT
Figure 13. Thermal Response − Various Duty Cycles
1E-03
10
TYPICAL CHARACTERISTICS
DPAK−3 Straight Lead
1E-02
100 ms
1 ms
10 ms
dc
http://onsemi.com
(Pb−Free)
(Pb−Free)
Package
DPAK−3
t, TIME (seconds)
100
5
1E-01
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
Figure 12. Diode Reverse Recovery Waveform
P
(pk)
I
S
DUTY CYCLE, D = t
1E+00
t
1
t
p
t
2
di/dt
1
t
/t
a
1E+01
2
2500 / Tape & Reel
75 Units / Rail
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
t
Shipping
rr
J(pk)
θJA
t
b
I
S
(t) = r(t) R
- T
0.25 I
A
= P
†
S
1E+02
(pk)
θJA
1
R
θJA
(t)
TIME
1E+03