NTD80N02 ON Semiconductor, NTD80N02 Datasheet - Page 2

• Manufacturer Part Number: NTD80N02
• Description: MOSFET N-CH 24V 80A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD80N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 20V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Case: TO-252
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Negative Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
S
S
S
GS
GS
GS
DS
GS
GS
GS
GS
= 20 Adc, V
= 40 Adc, V
= 20 Adc, V
= V
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= 10 Vdc, I
= 4.5 Vdc, I
= 10 Vdc, I
= 4.5 Vdc, I
GS
, I
D
GS
GS
GS
D
= 250 mAdc)
DS
DS
D
D
= 250 mAdc)
D
D
= 0 Vdc) (Note 3)
= 0 Vdc)
= 0 Vdc, T
= 80 Adc)
= 20 Adc)
= 40 Adc)
= 20 Adc)
= 24 Vdc)
= 24 Vdc, T
Characteristic
DS
J
GS
= 150°C)
J
= 15 Vdc, I
= 125°C)
= ±20 Vdc, V
(T
(I
dI
J
S
V
S
= 25°C unless otherwise noted)
D
/dt = 100 A/ms) (Note 3)
DS
= 20 Adc, V
= 10 Adc) (Note 3)
(V
(V
DS
(V
V
= 20 Vdc) (Note 3)
f = 1.0 MHz)
I
I
R
GS
DD
GS
D
D
DS
V
= 0 Vdc)
G
GS
= 20 Adc,
= 20 Adc,
= 4.5 Vdc,
= 20 Vdc,
= 4.5 Vdc,
= 2.5 Ω)
= 20 Vdc,
= 0 V,
http://onsemi.com
GS
= 0 Vdc,
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q1
Q2
Q
t
t
t
FS
oss
t
t
SD
rss
iss
rr
a
b
r
f
rr
T
Min
1.0
24
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.038
2250
−3.8
0.92
1.05
0.70
Typ
900
400
1.9
5.0
7.5
5.0
7.5
7.0
27
25
20
17
67
28
40
30
18
38
20
18
−
−
−
±100
2600
1100
Max
525
125
1.0
3.0
5.8
9.0
5.8
9.0
1.2
10
30
45
75
42
12
28
52
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
mΩ
nC
mC
pF
ns
ns