NTD80N02 ON Semiconductor, NTD80N02 Datasheet - Page 4

• Manufacturer Part Number: NTD80N02
• Description: MOSFET N-CH 24V 80A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD80N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 20V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Case: TO-252
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
5000
4000
3000
2000
1000
100
10
1
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
−8 −6 −4 −2 0
1
Figure 9. Resistive Switching Time Variation
V
I
V
D
DD
GS
t
t
= 20 A
d(off)
d(on)
= 20 V
= 10 V
t
V
t
f
r
Figure 7. Capacitance Variation
GS
R
versus Gate Resistance
V
G
DS
2
, GATE RESISTANCE (Ω)
4 6
C
C
C
oss
rss
iss
10
8 10 12 14 16 18 20 22 24
TYPICAL CHARACTERISTICS
T
V
J
GS
= 25°C
http://onsemi.com
= 0 V
100
4
10
8
6
4
2
0
0
80
70
60
50
40
30
20
10
V
Drain−to−Source Voltage versus Total Charge
Q
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
D
1
V
T
GS
J
Figure 10. Diode Forward Voltage versus
= 25°C
10
Figure 8. Gate−to−Source and
= 0 V
V
Q
SD
g
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
2
20
Q
T
Current
30
I
T
V
D
40
J
GS
= 1.0 A
= 25°C
50
28
24
20
16
12
8
4
0