NTD50N03R-035 ON Semiconductor, NTD50N03R-035 Datasheet - Page 5

• Manufacturer Part Number: NTD50N03R-035
• Description: MOSFET N-CH 25V 7.8A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD50N03R-035

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 11.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 12V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
800
600
400
200
100
10
0
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
10
1
C
C
V
I
V
Figure 9. Resistive Switching Time Variation
rss
D
iss
DS
GS
= 10 A
= 10 V
= 10 V
t
t
V
d(off)
d(on)
5
DS
Figure 7. Capacitance Variation
t
t
r
f
V
= 0 V
GS
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
0
V
V
GS
DS
= 0 V
(VOLTS)
1000
100
10
5
10
1
0.1
SINGLE PULSE
V
T
GS
C
Figure 11. Maximum Rated Forward Biased
V
= 25°C
10
DS
= 20 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
15
R
THERMAL LIMIT
PACKAGE LIMIT
Safe Operating Area
DS(on)
http://onsemi.com
C
C
C
1
iss
oss
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NTD50N03R
LIMIT
100
20
5
16
12
8
4
0
0
Q
20
18
16
14
12
10
V
8
6
4
2
0
GS
Drain−to−Source Voltage versus Total Charge
DS
10
0
2
T
V
Figure 10. Diode Forward Voltage versus
V
J
GS
SD
= 25°C
Figure 8. Gate−to−Source and
Q
Q
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
4
dc
10 ms
1 ms
10 ms
100 ms
g
GD
0.2
, TOTAL GATE CHARGE (nC)
6
100
Q
0.4
T
8
Current
10
0.6
12
I
T
D
J
= 30 A
= 25°C
V
14
0.8
GS
16
0
16
12
8
4
1.0