NTD50N03R-035 ON Semiconductor, NTD50N03R-035 Datasheet - Page 4

• Manufacturer Part Number: NTD50N03R-035
• Description: MOSFET N-CH 25V 7.8A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD50N03R-035

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 11.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 12V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

100
0.065
0.055
0.045
0.035
0.025
0.015
0.005
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
2
10 V
V
1
I
V
D
DS
−25
Figure 1. On−Region Characteristics
GS
V
= 10 A
Figure 5. On−Resistance Variation with
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 10 V
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
T
J
0
, JUNCTION TEMPERATURE (°C)
4
3
Gate−to−Source Voltage
V
7 V
GS
25
8 V
4
= 2.6 V
5
Temperature
50
5
6
75
6
6 V
2.8 V
7
100
7
8
125
8
I
T
D
J
= 15 A
5.5 V
= 25°C
4.5 V
3.5 V
http://onsemi.com
9
150
9
3 V
5 V
4 V
NTD50N03R
10
175
10
4
10,000
0.030
0.025
0.020
0.015
0.010
0.005
1000
100
100
80
60
40
20
0
0
10
0
0
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
DS
GS
1
= 25°C
V
V
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
2
20
I
D
T
, DRAIN CURRENT (AMPS)
T
T
3
J
J
J
= 150°C
T
and Gate Voltage
= 125°C
= 25°C
J
versus Voltage
= −55°C
10
4
30
5
15
6
V
V
T
GS
GS
7
J
= 125°C
40
= 4.5 V
= 10 V
20
8
9
10
50
25