NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet - Page 5

• Manufacturer Part Number: NTD20P06L-1G
• Description: MOSFET P-CH 60V 15.5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20P06L-1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 17.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 15.5 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
0.01
0.1
10
0.1
1
1E−03
1
0.1
V
Single Pulse
T
GS
C
Single Pulse
Figure 11. Maximum Rated Forward Biased
= 25°C
= −15 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Safe Operating Area
1
1E−02
R
Thermal Limit
Package Limit
DS(on)
Limit
10
1E−01
Figure 13. Thermal Response
10 ms
http://onsemi.com
100
dc
t, TIME (s)
1
100
Normalized to R
Chip
5
1E+00
350
300
250
200
150
100
0.0154 F
50
0.0175
0
25
Figure 12. Maximum Avalanche Energy versus
qJA
T
J
, STARTING JUNCTION TEMPERATURE (°C)
at Steady State (1 in Pad)
0.0854 F 0.3074 F 1.7891 F
0.0710
Starting Junction Temperature
50
1E+01
0.2706
75
0.5776
1E+02
100
I
107.55 F
D
0.7086
= −15 A
125
Ambient
1E+03
150