NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet - Page 5
![MOSFET P-CH 60V 15.5A IPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NTD20P06L-1G
Manufacturer Part Number
NTD20P06L-1G
Description
MOSFET P-CH 60V 15.5A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD20P06LT4G.pdf
(8 pages)
Specifications of NTD20P06L-1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 7.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
17.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 15.5 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
300
Company:
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
12 500
1000
100
0.01
0.1
10
0.1
1
1E−03
1
0.1
V
Single Pulse
T
GS
C
Single Pulse
Figure 11. Maximum Rated Forward Biased
= 25°C
= −15 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Safe Operating Area
1
1E−02
R
Thermal Limit
Package Limit
DS(on)
Limit
10
1E−01
Figure 13. Thermal Response
10 ms
http://onsemi.com
100
dc
t, TIME (s)
1
100
Normalized to R
Chip
5
1E+00
350
300
250
200
150
100
0.0154 F
50
0.0175
0
25
Figure 12. Maximum Avalanche Energy versus
qJA
T
J
, STARTING JUNCTION TEMPERATURE (°C)
at Steady State (1 in Pad)
0.0854 F 0.3074 F 1.7891 F
0.0710
Starting Junction Temperature
50
1E+01
0.2706
75
0.5776
1E+02
100
I
107.55 F
D
0.7086
= −15 A
125
Ambient
1E+03
150