NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet

MOSFET P-CH 60V 15.5A IPAK

NTD20P06L-1G

Manufacturer Part Number
NTD20P06L-1G
Description
MOSFET P-CH 60V 15.5A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD20P06L-1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 7.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
17.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 15.5 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
300
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
12 500
NTD20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source
Voltage
Voltage
Continuous
Drain Current
(Note 1)
Power Dissipa-
tion (Note 1)
Pulsed Drain
Current
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy (V
L = 2.7 mH, R
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
Pb−Free Packages are Available
Bridge Circuits
Power Supplies, Power Motor Controls
DC−DC Conversion
(Cu area = 1.127 in sq. [1 oz] including traces)
(Cu area = 0.412 in sq.)
DD
= 25 V, V
G
= 25 W)
Parameter
Parameter
Non−Repetitive
Steady State
Steady State
GS
(T
= 5 V, I
J
Continuous
= 25°C unless otherwise noted)
t
p
= 10 ms
PK
= 15 A,
t
T
T
p
A
A
v10 ms
= 25°C
= 25°C
Symbol
Symbol
V
V
T
R
R
R
V
E
I
P
T
GSM
DSS
DM
STG
T
I
qJC
qJA
qJA
GS
D
AS
J
D
L
,
−55 to
Value
−15.5
$20
$30
$50
Max
−60
175
304
260
110
2.3
65
80
1
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
A
A
20P06L
Y
WW
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
V
(BR)DSS
−60 V
CASE 369D
CASE 369C
1 2
1
Style 2
DPAK
2
Style 2
DPAK
ORDERING INFORMATION
3
3
Device Code
= Year
= Work Week
G
http://onsemi.com
130 mW @ −5.0 V
4
4
R
DS(on)
P−Channel
D
MARKING DIAGRAMS
Publication Order Number:
TYP
Gate
Gate
S
1
1
Drain
Drain
Drain
Drain
4
4
2
2
NTD20P06L/D
(Note 1)
I
−15.5 A
D
3
Source
3
Source
MAX

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NTD20P06L-1G Summary of contents

Page 1

... I MAX D (Note 1) R TYP DS(on) −15.5 A 130 mW @ −5.0 V P−Channel MARKING DIAGRAMS 4 4 Drain 3 DPAK 2 Style Drain Gate Source 4 4 Drain Device Code Gate Drain Source = Year = Work Week ORDERING INFORMATION Publication Order Number: NTD20P06L/D ...

Page 2

ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance Drain−to−Source On−Voltage ...

Page 3

TYPICAL PERFORMANCE CURVES − − − − −V ...

Page 4

I 6.25 5.0 3.75 2.5 1. Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1000 V = − ...

Page 5

V = − Single Pulse T = 25°C C 100 Limit DS(on) Thermal Limit Package Limit 0.1 0.1 1 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area ...

Page 6

... ORDERING INFORMATION Device NTD20P06L−1 NTD20P06L NTD20P06LT4 NTD20P06L−1G NTD20P06LG NTD20P06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package DPAK DPAK (Pb−Free) (Pb−Free) http://onsemi.com 6 † ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK−3 CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 ...

Page 8

... S 0.025 0.040 0.63 1.01 0.035 0.050 0.89 1. 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD20P06L/D ...

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