NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet - Page 4
![MOSFET P-CH 60V 15.5A IPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NTD20P06L-1G
Manufacturer Part Number
NTD20P06L-1G
Description
MOSFET P-CH 60V 15.5A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD20P06LT4G.pdf
(8 pages)
Specifications of NTD20P06L-1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 7.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Forward Transconductance Gfs (max / Min)
17.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 15.5 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
300
Company:
Part Number:
NTD20P06L-1G
Manufacturer:
ON
Quantity:
12 500
1000
100
10
1
1
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
= −15 A
= −30 V
= −5 V
t
d(off)
R
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
versus Gate Resistance
g
t
F
, GATE RESISTANCE (W)
t
d(on)
t
R
2400
2200
2000
1800
1600
1400
1200
1000
6.25
3.75
1.25
800
600
400
200
10
7.5
5.0
2.5
0
0
0
−10
I
D
C
V
C
iss
V
DS
Q
= −15 A
rss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
DS
gs
= 0 V
−5
Figure 7. Capacitance Variation
−V
Q
GS
4
g
, TOTAL GATE CHARGE (nC)
0
http://onsemi.com
−V
V
GS
DS
VOLTAGE (V)
Q
Q
C
100
C
C
5
= 0 V
GD
G
rss
iss
oss
4
8
10
20
15
10
5
0
0
V
T
J
GS
15
= 25°C
12
Figure 10. Diode Forward Voltage versus
= 0 V
0.25
T
T
−V
J
J
SD
= 25°C
= 25°C
20
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
0.5
16
25
60
50
40
30
20
10
0
0.75
Current
1
1.25
1.5
1.75