IPB085N06L G Infineon Technologies, IPB085N06L G Datasheet - Page 6

• Manufacturer Part Number: IPB085N06L G
• Description: MOSFET N-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB085N06L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 80A.10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 125µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 30V
• Power - Max: 188W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB085N06LGINCT

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
25
20
15
10
5
0
4
3
2
1
-60
0
T
V
I
-20
10
f
20
V
20
V
T
DS
j
60
[°C]
[V]
30
100
40
140
180
50
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
10
2.5
1.5
0.5
10
10
10
10
3
2
1
0
-1
3
2
1
0
-60
0
T
I
T
V
-20
IPB085N06L G
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
100
IPP085N06L G
1.5
140
180
2