IPB085N06L G Infineon Technologies, IPB085N06L G Datasheet

MOSFET N-CH 60V 80A TO-263

IPB085N06L G

Manufacturer Part Number
IPB085N06L G
Description
MOSFET N-CH 60V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB085N06L G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 80A.10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 125µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 30V
Power - Max
188W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB085N06LGINCT
Features
Maximum ratings,
Parameter
Type
Type
Package
Marking
Power-Transistor
v t
T
Package
R
Symbol Conditions
I
I
E
V
P
T T
v t
Marking
T
T
T
I
I
T
T
i t
R
V
Product Summary
V
R
I
IPB085N06L G
Value
IPP085N06L G
Unit

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IPB085N06L G Summary of contents

Page 1

... Power-Transistor Features Type Type Package Package Marking Maximum ratings, T Parameter v t Product Summary Marking Symbol Conditions IPB085N06L G IPP085N06L G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB085N06L G Symbol Conditions IPP085N06L G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPB085N06L G Symbol Conditions IPP085N06L G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 200 180 160 140 120 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPB085N06L G IPP085N06L G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 300 250 200 150 100 [ Typ. transfer characteristics 120 [ Typ. drain-source on resistance Typ. forward transconductance 150 100 IPB085N06L G IPP085N06L 120 160 I [ 100 120 I [A] D 200 140 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB085N06L G IPP085N06L - 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics [µ Drain-source breakdown voltage -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPB085N06L G IPP085N06L [nC] gate 100 g ate ...

Page 8

... PG-TO-263 (D²-Pak) IPB085N06L G IPP085N06L G ...

Page 9

... PG-TO220-3: Outline IPB085N06L G IPP085N06L G ...

Page 10

... IPB085N06L G IPP085N06L G ...

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