BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 4
![MOSFET N-CH 200V 21A TO-263](/photos/5/62/56245/buz30a_l3045a_sml.jpg)
BUZ30A H3045A
Manufacturer Part Number
BUZ30A H3045A
Description
MOSFET N-CH 200V 21A TO-263
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BUZ30A_H3045A.pdf
(10 pages)
Specifications of BUZ30A H3045A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
BUZ30A L3045A
BUZ30A L3045A
BUZ30AH3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AXT
SP000102176
SP000736082
BUZ30A L3045A
BUZ30AH3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AINTR
BUZ30AL3045AXT
SP000102176
SP000736082
Electrical Characteristics, at T
Rev. 2.5
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 42 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
I
I
V
t
Q
Symbol
S
SM
rr
SD
rr
Page 4
min.
-
-
-
-
-
Values
typ.
-
-
1.2
1.2
180
-
-
max.
1.6
21
84
BUZ 30A H
2010-07-02
V
ns
µC
Unit
A