BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 4

• Manufacturer Part Number: BUZ30A H3045A
• Description: MOSFET N-CH 200V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ30A L3045A; BUZ30A L3045A; BUZ30AH3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AXT; SP000102176; SP000736082

Electrical Characteristics, at T
Rev. 2.5
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
C
C
GS
R
R
= 25 ˚C
= 25 ˚C
= 100 V, I
= 100 V, I
= 0 V, I
F
F =
F =
= 42 A
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25˚C, unless otherwise specified
I
I
V
t
Q
Symbol
S
SM
rr
SD
rr
Page 4
min.
-
-
-
-
-
Values
typ.
-
-
1.2
1.2
180
-
-
max.
1.6
21
84
BUZ 30A H
2010-07-02
V
ns
µC
Unit
A