BUZ30A H3045A Infineon Technologies, BUZ30A H3045A Datasheet - Page 3

• Manufacturer Part Number: BUZ30A H3045A
• Description: MOSFET N-CH 200V 21A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ30A H3045A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ30A L3045A; BUZ30A L3045A; BUZ30AH3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AINTR; BUZ30AL3045AXT; SP000102176; SP000736082

Electrical Characteristics, at T
Rev. 2.5
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
GS
GS
GS
GS
≥
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 50
= 50
= 50
= 50
2
*
I
D *
Ω
Ω
Ω
Ω
DS
DS
DS
R
GS
GS
GS
GS
DS(on)max,
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
I
D
D
D
D
D
= 3 A
= 3 A
= 3 A
= 3 A
= 13.5 A
j
= 25˚C, unless otherwise specified
g
C
C
C
t
t
t
t
Symbol
d(on)
r
d(off)
f
Page 3
fs
iss
oss
rss
-
min.
-
-
-
-
-
-
6
Values
typ.
70
250
90
15
1400
280
130
30
max.
-
400
200
45
110
320
120
1900
BUZ 30A H
2010-07-02
ns
Unit
S
pF