SPP80N06S2L-11 Infineon Technologies, SPP80N06S2L-11 Datasheet - Page 7
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SPP80N06S2L-11
Manufacturer Part Number
SPP80N06S2L-11
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2L-11.pdf
(8 pages)
Specifications of SPP80N06S2L-11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 93µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
158W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013584
SPP80N06S2L11
SPP80N06S2L11
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
INFINEON
Quantity:
35 000
Company:
Part Number:
SPP80N06S2L-11
Manufacturer:
MAXIM
Quantity:
2 300
15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
300
240
220
200
180
160
140
120
100
= f (T
V
66
62
60
58
56
54
52
50
80
60
40
20
D
-60
0
25
= 80 A , V
SPP80N06S2L-11
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
SPP80N06S2L-11,SPB80N06S2L-11
8
6
4
2
0
0
SPP80N06S2L-11
10
Gate
D
20
= 80 A pulsed
)
30
0,2
V
40
DS max
50
SPI80N06S2L-11
60
0,8 V
70
DS max
2004-11-02
80
nC
Q
Gate
100